CHA7010 - X-band GaInP HBT High Power Amplifier

United Monolithic Semiconductors

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Datasheet Details

Part number: CHA7010
Manufacturer: United Monolithic Semiconductors
File Size: 264.28 KB
Datasheet: CHA7010_UnitedMonolithicSemiconductors.pdf
Description: X-band GaInP HBT High Power Amplifier

CHA7010 Product details

Description

The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications.. the backside of the chip is both RF and DC grounded. bond pads and back side are gold.

Features

10W output power High gain : > 18dB @ 10GHz High PAE : > 35% @ 10GHz On-chip bias control Linear collector current control High impedance interface for pulse mode Temperature compensated Chip size: 4.74 x 4.36 x 0.1 mm Vctr Vc Input Matching Network Inter-stage Output Combiner Vctr Vc Main Characteristics Tamb = +25°C Vctr Vc Symbol Parameter Min Typ F_op Operating frequency range 8.4 9.4 P_sat Saturated output power 10 P_1dBc Output power @ 1dBc 8 G_lin Linear gain 18 ESD Prot.

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X-band GaInP HBT High Power Amplifier United Monolithic Semiconductors

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