CHA7010
Description
The CHA7010 is a monolithic two-stage Ga As high power amplifier designed for X band applications. This device is manufactured using a Ga In P HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive ponents. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process:
- the backside of the chip is both RF and
DC grounded
- bond pads and back side are gold plated for patibility with eutectic die attach method and thermosonic or thermopression bonding process.
Vctr Vc
Main Features
10W output power High gain : > 18d B @ 10GHz High PAE : > 35% @ 10GHz On-chip bias control Linear collector current control High impedance interface for pulse mode Temperature pensated Chip size: 4.74 x 4.36 x 0.1 mm
Vctr Vc
Input Matching Network
Inter-stage
Output biner
Vctr Vc
Main Characteristics
Tamb = +25°C
Vctr Vc
Symbol
Parameter
Min Typ
F_op Operating...
