10W output power High gain : > 18dB @ 10GHz High PAE : > 35% @ 10GHz On-chip bias control Linear collector current control High impedance interface for pulse mode Tempera.
This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A ni.
The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transist.
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